Description
General Description
This IGBT is produced using advanced Magnachip’s Field Stop
Trench IGBT 2nd Generation Technology, which is not only the
highest efficiency capable of switching behavior, but also it is
high ruggedness and excellent quality for solar inverter, UPS,
IH, welder and PFC application where low conduction losses
are essential.
Features
High Speed Switching & Low Power Loss
VCE(sat) = 1.85V @ IC = 60A
Eoff = 0.53mJ @ TC = 25°C
High Input Impedance
trr = 110ns (typ.) @diF/dt = 500A/ μs
Maximum Junction Temperature 175°C
